KM681000BLTI-10L The Samsung Electronics KM681000BLTI-10L is a 128K x 8 bit low power CMOS Static RAM. It operates from a single 5.0V supply and offers a maximum access time of 100ns.
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KM681000BLTI-10L

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics KM681000BLTI-10L is a 128K x 8 bit low power CMOS Static RAM. It operates from a single 5.0V supply and offers a maximum access time of 100ns.
✓ Total Stock: 2 pcs
$ Price Range: $10.03

KM681000BLTI-10L Available from 1 distributor

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KM681000BLTI-10L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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KM681000BLTI-10L Description

Short technical summary and product information.

The KM681000BLTI-10L is a low power CMOS Static RAM from Samsung Electronics, part of the KM681000B family. Fabricated using advanced 0.6µ CMOS process technology, this memory component offers a 128K x 8 bit organization.

 

Key electrical specifications include a single 5.0V ±10% power supply voltage and a maximum access time of 100ns. It features a low data retention voltage of 2V (Min) for battery-backed applications and TTL compatible three-state outputs. The device consumes a maximum standby current of 50µA and an operating current of 70mA.

 

This SRAM is available in a 32-pin TSOP I R/F package, designed for surface mounting. The KM681000BLTI-10L is suitable for various system designs requiring reliable and efficient memory solutions.

KM681000BLTI-10L Quick Information

Product Type: CMOS SRAM
Series: KM681000B
Canonical Name: KM681000BLTI-10L CMOS SRAM
Subcategory: Static RAM

KM681000BLTI-10L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KM681000BLTI-10L Estimated Pricing

Qty Low High
1+ $10.03 $10.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

KM681000BLTI-10L Features

  • 128K x 8 bit low power CMOS SRAM.
  • Single 5.0V power supply voltage.
  • Maximum access time of 100ns.
  • Low data retention voltage (2V Min).
  • TTL compatible three-state output.

KM681000BLTI-10L Applications

  • Used in high-density memory storage systems
  • Suitable for embedded electronic devices
  • Ideal for power-sensitive applications
  • Applicable in consumer electronics

KM681000BLTI-10L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the organization of the KM681000BLTI-10L SRAM?

The KM681000BLTI-10L has a 128K x 8 bit organization.

What is the operating voltage for the KM681000BLTI-10L?

The operating voltage is a single 5.0V ±10%.

What is the maximum access time for the KM681000BLTI-10L?

The maximum access time is 100ns.

What is the standby current of the KM681000BLTI-10L?

The maximum standby current is 50µA.

What package type is the KM681000BLTI-10L available in?

It is available in a 32-TSOP I R/F package.

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