| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,232 pcs
|
7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The KM681000BLGI-7L is part of Samsung Electronics' advanced CMOS SRAM family, fabricated using 0.6µm process technology. This memory component features a 128K x 8 bit organization, making it suitable for various system designs requiring efficient data storage.
Key electrical specifications include a single 5.0V ±10% power supply voltage and a low data retention voltage of 2V minimum, enabling battery-backed operation. The device supports TTL compatible inputs and outputs, with three-state output capability for flexible system integration. Access times are available in 70ns and 100ns options, with standby current as low as 50µA and operating current typically 70mA.
Available in JEDEC standard package types such as 32-DIP, 32-SOP, and 32-TSOP I (Reverse/Forward), the KM681000BLGI-7L offers user flexibility in system design. This SRAM is designed for applications requiring reliable and low-power memory solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KM681000BLGI-7L has a 128K x 8 bit organization.
The operating voltage is a single 5.0V with a tolerance of ±10%.
The minimum data retention voltage is 2V.
It is available in JEDEC Standard 32-DIP, 32-SOP, and 32-TSOP I R/F packages.
Speed options include 70ns and 100ns.
The standby current for the KM681000BLI-L variant is a maximum of 50µA.
The operating current for the KM681000BLI variant is a maximum of 70mA.