| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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950 pcs
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950 pcs | On Request | 1 | On Request | On Request | 04+19 | On Request | On Request |
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This Samsung Electronics KM416V4104BS-5 is a DRAM integrated circuit. It features a 4MX16 EDO memory type and operates at a voltage of 3.3V.
The component has a speed rating of 50ns and an operating temperature range of 0°C to +85°C. It is housed in a TSOP2(50) package, designed for surface mounting.
This DRAM is RoHS3 compliant, with an MSL rating of 1 Unlimited and is REACH Unaffected. Its specifications make it suitable for various memory applications requiring reliable performance within the specified temperature and voltage parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.3 V.
The speed is 50 ns.
It is available in a TSOP2(50) package.
The operating temperature range is 0°C to +85°C.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.