| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | 9649G/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Access Time | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Memory Type | |
| Military Grade | |
| Mounting Type | |
| Number of Pins | |
| Operating Voltage | |
| Package / Case | |
| SVHC Present | |
| Technology |
The Samsung Electronics KM416C254BJ-5 is a Dynamic Random Access Memory (DRAM) component. It employs Extended Data Out (EDO) mode technology, which allows for high-speed random access of memory cells within the same row.
This DRAM has an organization of 256K x 16 bits, providing a data bus width of 16 bits. It is available with optional features including power supply voltage options of +5.0V or +3.3V, and access times of -5, -6, or -7. The component is housed in a 40-pin Plastic SOJ package.
Designed for applications requiring efficient memory access, the KM416C254BJ-5 is suitable for systems where speed and density are critical. Its EDO capability enhances performance over standard DRAMs.
The KM416C254BJ-5 operates at either 5.0V or 3.3V supply voltage.
The device is housed in a 40-pin Small Outline J-Lead (SOJ) package.
It uses Extended Data Out (EDO) DRAM technology.
The organization is 256K words by 16 bits (262,144 x 16), for a total of 4 Mbits.
The data bus width is 16 bits.
It has 40 pins in a SOJ package.
The device is designed for surface mount assembly.