0402N680F500CG
Walsin Technology
The Walsin Technology 0402N680F500CG is a ceramic capacitor. It features RoHS3 compliance and MSL Level 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
301 pcs
|
301 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Samsung Electronics KM2B8001CM-BB01 is a multi-chip package memory module designed for advanced applications. It combines 256GB of Universal Flash Storage (UFS) with 48Gb of LPDDR4X SDRAM.
The UFS component supports JEDEC standard UFS 2.1 features, including command queuing, caching, and secure operations. It offers a high-speed serial interface supporting up to HS-GEAR3 2-Lane, with backward compatibility to UFS 2.0. Power for the UFS I/O and core is supplied via VCCQ2 at 1.8V and VCC at 3.3V, respectively.
The LPDDR4X SDRAM features a dual-data-rate architecture for efficient data transfer. Each chip is composed of 2 channels, with each channel having 8 internal banks. It supports burst lengths of 16 and 32 with a sequential burst type. The memory module is housed in a multi-chip package.
This integrated solution is suitable for devices requiring high-capacity, high-speed storage and memory, such as mobile devices and embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KM2B8001CM-BB01 is a memory module that combines 256GB of UFS and 48Gb of LPDDR4X SDRAM.
The UFS component supports JEDEC standard UFS 2.1 features.
The UFS interface supports up to HS-GEAR3 2-Lane.
The LPDDR4X SDRAM features a dual-channel architecture, with 2 channels per chip.
The LPDDR4X SDRAM supports burst lengths of 16 and 32 (OTF).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
