| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KGF16N05D-400 is a dual N-Channel MOSFET from Intersil designed for low-voltage power switching applications. It offers a drain-to-source voltage rating of 5.5V and a continuous drain current of 16A at 25°C ambient temperature. The device achieves a maximum on-resistance of 0.95mΩ at VGS = 4.5V and ID = 8A, with a typical gate charge of 5.5nC.
This MOSFET is housed in a 20-bump WLCSP (Wafer Level Chip Scale Package) and is surface mount compatible. The package provides a typical thermal resistance of 50°C/W junction-to-ambient and 10°C/W junction-to-package. Maximum power dissipation is 2.5W at 25°C ambient.
The part supports pulsed drain current up to 40A and single pulse avalanche current of 10A. Gate threshold voltage is 900mV maximum at ID = 250µA. These characteristics make it suitable for load switching, battery protection, and power management in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
5.5V minimum at ID = 5mA.
16A maximum at TA = 25°C.
0.95mΩ maximum at ID = 8A, VGS = 4.5V.
20-bump WLCSP (Wafer Level Chip Scale Package).
900mV maximum at ID = 250µA.
2.5W at TA = 25°C.