| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Peak Forward Surge Current |
The KBU6M from GI is a single-phase silicon bridge rectifier with a robust design suitable for various power applications. It features an average forward rectified output current of 6.0A at a case temperature of 100°C and can handle repetitive peak reverse voltages ranging from 50V to 1000V.
This rectifier is built to withstand surge overload conditions, rated up to 250A for single sine-wave conditions. The operating junction and storage temperature range is -55°C to +150°C, ensuring reliability in demanding environments. It also boasts a typical instantaneous forward voltage drop of 1.1V at 6.0A.
The KBU6M is housed in a SIP (Single In-line Package) and is designed for through-hole mounting. Its thermal resistance from junction to ambient is typically 2.7°C/W, facilitating efficient heat dissipation. The component is also noted for its flammability classification of 94V-0 and UL safety approval.
Key electrical characteristics include a maximum DC blocking voltage of up to 1000V and a maximum RMS bridge input voltage of 700V. The maximum DC reverse current per element is rated at 10μA at 25°C and 500μA at 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KBU6M has an average forward rectified output current of 6.0A at a case temperature of 100°C.
The KBU6M can handle a maximum repetitive peak reverse voltage of 1000V.
The KBU6M has a peak forward surge current rating of 250A under single sine-wave conditions.
The KBU6M operates within a temperature range of -55°C to +150°C.
The typical instantaneous forward voltage drop per diode for the KBU6M is 1.1V at 6.0A.
The KBU6M is supplied in a SIP package.
The minimum breakdown voltage for the KBU6M is 1kV.