| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,908 pcs
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13908 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K9K8G08UOA-PCBO from Samsung Electronics is an 8G-bit NAND Flash Memory with a 256M-bit spare. Its NAND cell architecture offers a cost-effective solution for solid-state applications.
This memory device features a voltage supply range of 2.70V to 3.60V. The memory organization includes a cell array of (1G + 32M) x 8bit and a data register of (2K + 64) x 8bit. Program operations occur on a (2K + 64)Byte page, with typical program times of 200μs. Erase operations are performed on a (128K + 4K)Byte block, with typical erase times of 1.5ms.
The K9K8G08UOA-PCBO supports command/address/data multiplexed I/O ports and command-driven operation. It also includes intelligent copy-back functionality with internal 1bit/528Byte EDC and a unique ID for copyright protection.
Packaged in a TSOP, this NAND Flash Memory is suitable for large non-volatile storage applications such as solid-state file storage and other portable applications requiring non-volatility. The operating temperature range is -10°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K9K8G08UOA-PCBO has a memory cell array organized as (1G + 32M) x 8bit, providing a total capacity of 1.032Gbit.
The operating voltage range is 2.70V to 3.60V.
The page program size is (2K + 64)Byte, which is 64KB.
The block erase size is (128K + 4K)Byte, which is 132KB.
The device is available in a TSOP package.
The storage temperature range is -65°C to +150°C.
Yes, it supports intelligent copy-back with internal 1bit/528Byte EDC.