| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
559 pcs
|
559 pcs | On Request | 1 | On Request | On Request | 1231+ | On Request | On Request | |
|
280 pcs
|
280 pcs | On Request | 1 | On Request | On Request | 12/13+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung Electronics K9K8G08U0D-SIB0 is a high-capacity NAND Flash memory integrated circuit designed for various storage applications. It offers an 8Gb storage capacity and operates at a standard voltage of 3.3V.
Key electrical specifications include an access time of 70ns and support for a parallel interface. The component is rated for 100,000 program/erase cycles, ensuring durability for frequent data operations. Data retention is specified for up to 10 years.
Packaged in a TSOP48 format, this component is suitable for surface-mount applications. It is described as RoHS3 Compliant and Lead-Free, indicating adherence to environmental standards. The Moisture Sensitivity Level (MSL) is rated as 1, meaning it has unlimited shelf life under typical conditions.
This NAND Flash memory is a reliable choice for embedded systems, consumer electronics, and industrial applications requiring non-volatile data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.3V.
The capacity is 8Gb.
The access time is 70ns.
It can withstand 100,000 program/erase cycles.
Data retention is specified for 10 years.
It is supplied in a TSOP48 package.
The RoHS status is RoHS3 Compliant.