| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,022 pcs
|
5022 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The Samsung Electronics K9GAG08U0E-SCB0??? is a NAND Flash Memory designed for cost-effective solid-state mass storage solutions. It operates within a voltage range of 2.7V to 3.6V, with a typical supply voltage of 3.3V.
This flash memory features a memory cell array of (2,076M x 110.49K) x 8bit and a data register of (8K + 436) x 8bit. Program operations take a typical 1.2ms for an 8,628-byte page, while block erase operations take a typical 1.5ms for a (1M+54.5K)byte block. Data can be read out at a serial access time of 30ns.
The device utilizes a 2bit per memory cell architecture and requires an ECC of 24bit/(1K +54.5)Byte. It supports command/address/data multiplexed I/O ports and includes program/erase lockout during power transitions. The K9GAG08U0E-SCB0??? is packaged in a Pb-Halogen FREE 48-Pin TSOP1 (12 x 20 / 0.5 mm pitch) with a surface mount type.
This flash memory is an optimal solution for large nonvolatile storage applications such as solid-state file storage and other portable applications requiring non-volatility.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
48-Pin TSOP1 with 0.5 mm lead pitch, surface mount.
(8K + 436) bytes.
(1M + 54.5K) bytes.
400µs maximum.
1.2 ms.
-65°C to +100°C.