| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,022 pcs
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5022 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung K9GAG08U0E-SCB0 is a NAND Flash memory component designed for cost-effective solid-state mass storage solutions. It operates at a 3.3V Vcc and features a 48-Pin TSOP1 package with a 0.5 mm pitch.
This flash memory offers a typical program time of 1.2ms per page and a typical block erase time of 1.5ms. Data can be read out at a serial access time of 30ns per byte, with a random read time of 400µs maximum. The device utilizes a 2-bit per memory cell architecture and requires ECC (Error Correcting Code) of 24bit/(1K +54.5)Byte.
The K9GAG08U0E-SCB0 is suitable for large non-volatile storage applications, including solid-state file storage and portable devices requiring non-volatility. Its on-chip write controller automates program and erase functions, including internal verification. The memory cell array is (2,076M x 110.49K) x 8bit, with a page size of (8K + 436)Byte and a block erase size of (1M + 54.5K)Byte.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V, with a nominal voltage of 3.3V.
It is provided in a 48-pin TSOP1 package with 0.5mm lead spacing, designed for surface mount.
The page size is 8K+436 bytes.
The typical page program time is 1.2ms.
The typical block erase time is 1.5ms.
The device requires 24-bit ECC per 1K+54.5 bytes.
The maximum random read access time is 400µs.