| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,479 pcs
|
5479 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Voltage | |
| Lead Style | |
| Memory Organization | |
| Storage Temperature | |
| Voltage Supply |
The Samsung Electronics K9F8G08UOM-PCBO is a NAND Flash Memory designed for solid-state mass storage applications. It features a memory cell array organization of 1M+32K bits by 8 bits and a data register organization of (256+8) bits by 8 bits. This component operates within a voltage supply range of 2.7V to 5.5V.
Key performance characteristics include a typical page program time of 250ms and a typical block erase time of 2ms. For read operations, it offers a random access time of 10ms maximum and a serial page access time of 80ns minimum. The NAND cell technology provides high reliability with an endurance rating of 1,000,000 Program/Erase cycles and a data retention period of 10 years.
Packaged in a 40-lead TSOP Type II with a 0.8mm pitch, this memory is suitable for various embedded systems. Absolute maximum ratings include an input voltage range of -0.6V to +7.0V, an operating temperature under bias from -10℃ to +125℃, and a storage temperature range of -65℃ to +150℃. It also features hardware data protection mechanisms like program/erase lockout during power transitions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 5.5V
40-lead TSOP Type II with 0.8mm pitch
-10°C to +125°C
1,000,000 program/erase cycles
10 years
Typically 250ms
Typically 2ms