| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,040 pcs
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9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K9F6408UOC-TCBO from Samsung Electronics is an 8M x 8 bit NAND Flash Memory designed for cost-effective solid-state mass storage. It features an 8M(8,388,608)x8bit memory cell array with a spare 256K(262,144)x8bit.
This memory device operates with a voltage supply range of 1.70V to 1.95V, and a nominal Vcc of 3.3V is also mentioned. Key performance specifications include a page program time of typically 200µs and a block erase time of typically 2ms. Random access read time is a maximum of 10µs, with serial page access at 50ns.
The K9F6408UOC-TCBO is housed in a TSOP package, making it suitable for various portable applications requiring non-volatility, such as solid-state file storage, digital voice recorders, and digital still cameras. The memory offers 100K program/erase cycles and 10 years of data retention.
Absolute maximum ratings include voltages on any pin relative to VSS from -0.6V to +4.6V. The operating temperature range is -10℃ to +125℃, and storage temperature ranges from -65℃ to +150℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory cell array is organized as (8M + 256K)bit x 8bit, and the data register is (512 + 16)bit x8bit.
The voltage supply range is 1.70 to 1.95V, with a nominal Vcc of 3.3V.
A page program operation takes typically 200µs, and a block erase operation takes typically 2ms.
The component is supplied in a TSOP package.
The K9F6408UOC-TCBO has an endurance of 100K Program/Erase Cycles.
The data retention is rated for 10 years.
The device can operate within a temperature range of -10℃ to +125℃.