| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,583 pcs
|
2583 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
356 pcs
|
356 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Interface | |
| Medical Grade | |
| Memory Type | |
| Military Grade | |
| SVHC Present |
The K9F4G08U0E-SIB0 from Samsung Electronics is a 4Gb E-die NAND Flash memory component. This device utilizes a parallel interface for data transfer and is packaged in a TSOP form factor.
Designed for a wide range of applications, the K9F4G08U0E-SIB0 operates within a voltage range of 2.7V to 3.6V. Its operating temperature spans from -40°C to 85°C, making it suitable for various environmental conditions.
Key specifications include 48 terminals and a single circuit configuration. This component is part of Samsung's NAND Flash memory offerings, providing reliable data storage solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It uses a TSOP (Thin Small Outline Package) package.
It is a FLASH memory device.
It uses a parallel interface.
It has 48 terminals.
It has 1 circuit.