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K9F2G08U0M The Samsung Electronics K9F2G08U0M is a NAND Flash Memory with a 256M x 8 Bit organization. It supports dual voltage supplies of 1.70V-1.95V and 2.7V-3.6V.
Mfr Part #:

K9F2G08U0M

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K9F2G08U0M is a NAND Flash Memory with a 256M x 8 Bit organization. It supports dual voltage supplies of 1.70V-1.95V and 2.7V-3.6V.
✓ Total Stock: 3,616 pcs
$ Price Range: $1.28

K9F2G08U0M Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
3,616 pcs
On Request
3616 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

K9F2G08U0M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Industrial Grade
Lead Spacing
Lead Style
Memory Organization
Operating Voltage
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K9F2G08U0M Description

Short technical summary and product information.

The Samsung Electronics K9F2G08U0M is a 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory. It is designed to operate with two voltage supply ranges: 1.70V to 1.95V for 1.8V devices and 2.7V to 3.6V for 3.3V devices.

 

Key electrical specifications include standby current (ISB2) typically 10mA and maximum 50mA for the 3.3V device, and typically 20mA and maximum 100mA for the 1.8V device. Various timing parameters such as write cycle time (tWC) up to 30ns and read access time (tREA) up to 18ns are also specified.

 

This NAND Flash Memory is available in TSOP and WSOP package types. Its organization supports flexible memory configurations for various applications.

K9F2G08U0M Quick Information

Product Type: NAND Flash Memory
Canonical Name: Samsung Electronics K9F2G08U0M NAND Flash Memory
Subcategory: NAND Flash Memory

K9F2G08U0M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K9F2G08U0M Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K9F2G08U0M Features

  • 2Gb NAND Flash memory capacity.
  • Dual supply voltage ranges: 1.70-1.95V and 2.7-3.6V.
  • 30ns max read and write cycle time.
  • Available in TSOP and WSOP packages.
  • 256M x 8 or 128M x 16 bit organization.

K9F2G08U0M Applications

  • Ideal for embedded storage in consumer electronics.
  • Suitable for data logging in industrial systems.
  • Used in mobile devices requiring high-density memory.
  • Applicable for solid-state drive (SSD) buffer memory.

K9F2G08U0M FAQs

5 frequently asked questions generated from this part’s specifications.
What are the operating voltage ranges for the K9F2G08U0M?

The K9F2G08U0M supports two voltage supply ranges: 1.70V to 1.95V and 2.7V to 3.6V.

What is the memory organization of the K9F2G08U0M?

The memory organization is 256M x 8 Bit or 128M x 16 Bit.

What is the maximum write cycle time (tWC) for this NAND Flash Memory?

The maximum write cycle time (tWC) is 30ns.

What is the maximum read access time (tREA) for the K9F2G08U0M?

The maximum read access time (tREA) is 18ns.

What package types are available for the K9F2G08U0M?

The K9F2G08U0M is available in TSOP and WSOP package types.

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