K9F2G08U0B-PCB0 The Samsung K9F2G08U0B-PCB0 is a 256MB NAND Flash Memory IC. It operates at 3.3V and comes in a TSOP-48 package, suitable for portable applications.
Mfr Part #:

K9F2G08U0B-PCB0

Available from 3 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung K9F2G08U0B-PCB0 is a 256MB NAND Flash Memory IC. It operates at 3.3V and comes in a TSOP-48 package, suitable for portable applications.
✓ Total Stock: 24,028 pcs
$ Price Range: $1.28

K9F2G08U0B-PCB0 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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17,100 pcs
17100 pcs On Request 1 On Request On Request 1134+ On Request On Request
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6,696 pcs
6696 pcs On Request 1 On Request On Request On Request On Request On Request
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232 pcs
232 pcs On Request 1 On Request On Request 1125+ On Request On Request

K9F2G08U0B-PCB0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Spacing
Lead Style
Mounting Type
Number of Pins
Operating Voltage
SVHC Present

K9F2G08U0B-PCB0 Description

Short technical summary and product information.

The Samsung K9F2G08U0B-PCB0 is a 256MB NAND Flash Memory IC designed for non-volatile storage applications. It operates within a voltage range of 2.7V to 3.6V, with a typical supply of 3.3V. This memory IC features a TSOP-48 package and is designed for surface mount installation.

 

Key electrical characteristics include a fast read cycle time of 25ns per byte, a page program time of 200µs, and a block erase time of 1.5ms. The K9F2G08U0B-PCB0 offers extended reliability with 100,000 program/erase cycles, supported by an Error Correcting Code (ECC) with a real-time mapping-out algorithm. Its NAND cell structure provides a cost-effective solution for solid-state applications.

 

This flash memory is suitable for various portable applications requiring non-volatile storage, such as solid-state file storage. The I/O pins serve as ports for address, data input/output, and command input. The on-chip write controller automates program and erase functions, including internal verification and margining of data.

K9F2G08U0B-PCB0 Quick Information

Product Type: NAND Flash Memory
Series: K9F2G08U0B
Canonical Name: Samsung K9F2G08U0B-PCB0 256MB NAND Flash Memory
Subcategory: Flash Memory

K9F2G08U0B-PCB0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K9F2G08U0B-PCB0 Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K9F2G08U0B-PCB0 Features

  • 256MB NAND Flash Memory IC.
  • Operates at 3.3V supply voltage.
  • TSOP-48 package for surface mounting.
  • 100,000 program/erase cycle reliability.
  • Fast read, program, and erase times.

K9F2G08U0B-PCB0 Applications

  • Suitable for portable applications.
  • Used in solid-state file storage.
  • Non-volatile data storage needs.
  • Embedded system memory.

K9F2G08U0B-PCB0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the K9F2G08U0B-PCB0?

The operating voltage for the K9F2G08U0B-PCB0 is 3.3V, with a range of 2.7V to 3.6V.

What is the storage capacity of the K9F2G08U0B-PCB0?

The K9F2G08U0B-PCB0 has a storage capacity of 256MB.

What package type is the K9F2G08U0B-PCB0 available in?

The K9F2G08U0B-PCB0 is available in a TSOP-48 package.

How many pins does the K9F2G08U0B-PCB0 have?

The K9F2G08U0B-PCB0 has 48 pins.

What is the program/erase cycle reliability of this flash memory?

The K9F2G08U0B-PCB0 offers extended reliability with 100,000 program/erase cycles.

What is the typical page program time for the K9F2G08U0B-PCB0?

The typical page program time for the K9F2G08U0B-PCB0 is 200µs for a (2K+64)Byte page.

What is the typical block erase time?

The typical block erase time is 1.5ms for a (128K+4K)Byte block.

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