K9F1G08UOD-SCBO The Samsung Electronics K9F1G08UOD-SCBO is a 1G bit Nand Flash memory chip. It operates at 3.3V and comes in a 48-pin TSOP package.
Mfr Part #:

K9F1G08UOD-SCBO

Available from 2 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K9F1G08UOD-SCBO is a 1G bit Nand Flash memory chip. It operates at 3.3V and comes in a 48-pin TSOP package.
✓ Total Stock: 15,129 pcs
$ Price Range: $1.28

K9F1G08UOD-SCBO Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,635 pcs
10635 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,494 pcs
4494 pcs On Request 1 On Request On Request 10+ On Request On Request

K9F1G08UOD-SCBO Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Spacing
Lead Style
Mounting Type
SVHC Present
Voltage Supply

K9F1G08UOD-SCBO Description

Short technical summary and product information.

The K9F1G08UOD-SCBO from Samsung Electronics is a 1 Gigabit Nand Flash memory device organized as 128M x 8 bits. It operates with a supply voltage of 3.3V, with a device range of 2.7V to 3.6V. This memory chip features automatic program and erase functions, with a page program size of (2K+64) Bytes and a block erase size of (128K+4K) Bytes.

 

Key performance specifications include a random read access time of 40µs maximum and a serial access time of 25ns minimum. The page program time is typically 250µs, and the block erase time is typically 2ms. It utilizes a command/address/data multiplexed I/O port and includes hardware data protection features like program/erase lockout during power transitions.

 

This component is housed in a 48-pin TSOP I package with a 0.5mm pitch, suitable for surface mounting. It also incorporates ECC requirement of 1 bit per 528 bytes and offers a unique ID for copyright protection. The reliable CMOS floating-gate technology ensures robust performance for various applications requiring non-volatile storage.

K9F1G08UOD-SCBO Quick Information

Product Type: Nand Flash Memory
Series: K9F1G08U0D
Canonical Name: Samsung Electronics K9F1G08UOD-SCBO 1G bit Nand Flash Memory
Subcategory: Nand Flash

K9F1G08UOD-SCBO Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K9F1G08UOD-SCBO Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K9F1G08UOD-SCBO Features

  • 1G bit Nand Flash memory.
  • 3.3V operating voltage.
  • 48-pin TSOP I package.
  • Fast 25ns serial access time.
  • Automatic program and erase functions.

K9F1G08UOD-SCBO Applications

  • Embedded systems storage.
  • Data logging applications.
  • Firmware storage.
  • Consumer electronics.

K9F1G08UOD-SCBO FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the K9F1G08UOD-SCBO?

The device operates from a 3.3V supply, with a range of 2.7V to 3.6V.

What package is the K9F1G08UOD-SCBO available in?

It is available in a TSOP-48 surface-mount package with 0.5mm lead spacing.

What is the memory cell array organization of the K9F1G08UOD-SCBO?

The memory cell array is organized as (128M+4M)x8 bit, with a data register of (2K+64)x8 bit.

What are the page program and block erase times?

Page program time is typically 250µs, and block erase time is typically 2ms.

What ECC requirement does the K9F1G08UOD-SCBO have?

The device requires 1-bit ECC per 528 bytes.

What is the maximum random read access time?

The maximum random read access time is 40µs.

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