| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,635 pcs
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10635 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,494 pcs
|
4494 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The K9F1G08UOD-SCBO from Samsung Electronics is a 1 Gigabit Nand Flash memory device organized as 128M x 8 bits. It operates with a supply voltage of 3.3V, with a device range of 2.7V to 3.6V. This memory chip features automatic program and erase functions, with a page program size of (2K+64) Bytes and a block erase size of (128K+4K) Bytes.
Key performance specifications include a random read access time of 40µs maximum and a serial access time of 25ns minimum. The page program time is typically 250µs, and the block erase time is typically 2ms. It utilizes a command/address/data multiplexed I/O port and includes hardware data protection features like program/erase lockout during power transitions.
This component is housed in a 48-pin TSOP I package with a 0.5mm pitch, suitable for surface mounting. It also incorporates ECC requirement of 1 bit per 528 bytes and offers a unique ID for copyright protection. The reliable CMOS floating-gate technology ensures robust performance for various applications requiring non-volatile storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates from a 3.3V supply, with a range of 2.7V to 3.6V.
It is available in a TSOP-48 surface-mount package with 0.5mm lead spacing.
The memory cell array is organized as (128M+4M)x8 bit, with a data register of (2K+64)x8 bit.
Page program time is typically 250µs, and block erase time is typically 2ms.
The device requires 1-bit ECC per 528 bytes.
The maximum random read access time is 40µs.