| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 09/10+ | On Request | On Request |
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The Samsung Electronics K7R161882B-FC20 is a high-performance QDR SRAM designed for demanding applications. It features an 18Mb density, providing ample storage capacity.
Key electrical specifications include a maximum clock frequency of 200MHz and a maximum access time of 0.45ns, ensuring rapid data retrieval. The device operates within a supply voltage range of 1.7V to 1.9V, with a typical voltage of 1.8V. It has a synchronous architecture and an 18-bit word size.
This SRAM is housed in a 165-pin FBGA package, suitable for surface mounting. The operating temperature range is from 0°C to 70°C, classified as commercial. The part number K7R161882B-FC20 is associated with Samsung Semiconductor.
Environmental compliance includes RoHS3 compliance and an MSL rating of 1. REACH status is unaffected.
The device operates with a typical supply voltage of 1.8V, with a minimum of 1.7V and a maximum of 1.9V.
The K7R161882B-FC20 is available in a 165-pin FBGA (Fine-Pitch Ball Grid Array) package for surface mount assembly.
The operating temperature range is 0°C to 70°C, commercial classification.
The maximum clock frequency is 200 MHz.
The maximum access time is 0.45 ns.
The memory density is 18 Mb (megabits).
The device uses QDR (Quad Data Rate) architecture and is synchronous.