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K6X8016T3B-TF70 The Samsung Electronics K6X8016T3B-TF70 is a low power CMOS SRAM with a 512K x 16 organization. It operates with a supply voltage range of 2.7V to 3.6V and features a speed of 70ns.
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K6X8016T3B-TF70

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K6X8016T3B-TF70 is a low power CMOS SRAM with a 512K x 16 organization. It operates with a supply voltage range of 2.7V to 3.6V and features a speed of 70ns.
✓ Total Stock: 7 pcs
$ Price Range: $1.87

K6X8016T3B-TF70 Available from 1 distributor

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K6X8016T3B-TF70 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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K6X8016T3B-TF70 Description

Short technical summary and product information.

The K6X8016T3B-TF70 from Samsung Electronics is a full CMOS static RAM with a 512K x 16 bit organization. Fabricated using advanced CMOS process technology, this component is designed for flexibility in system design, supporting various operating temperature ranges.

 

Key electrical specifications include a power supply voltage range of 2.7V to 3.6V and a speed of 70ns. It also features a low data retention voltage of 1.5V minimum, suitable for battery back-up operations, and low data retention current. The device offers three-state outputs for efficient data transfer.

 

This SRAM has a maximum standby current (ISB1) of 15µA and a maximum operating current (ICC2) of 30mA. It operates within an industrial temperature range of -40°C to 85°C. The component is supplied in a 44-TSOP2-400F package, suitable for surface mounting.

 

Designed for general-purpose memory applications, the K6X8016T3B-TF70 provides reliable data storage with low power consumption. Its specifications make it suitable for embedded systems and other applications requiring efficient memory solutions.

K6X8016T3B-TF70 Quick Information

Product Type: CMOS SRAM
Canonical Name: Samsung Electronics K6X8016T3B-TF70 CMOS SRAM
Subcategory: Special Purpose

K6X8016T3B-TF70 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K6X8016T3B-TF70 Estimated Pricing

Qty Low High
1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

K6X8016T3B-TF70 Features

  • Full CMOS process technology.
  • 512K x 16 memory organization.
  • 2.7V to 3.6V power supply voltage.
  • 70ns speed for fast access.
  • 44-TSOP2-400F package type.

K6X8016T3B-TF70 Applications

  • Suitable for battery back-up.
  • Designed for system flexibility.
  • Low power consumption applications.
  • Industrial temperature operation.

K6X8016T3B-TF70 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the organization of the K6X8016T3B-TF70 SRAM?

The K6X8016T3B-TF70 has a 512K x 16 bit organization.

What is the operating voltage range for this Samsung SRAM?

The operating voltage range is 2.7V to 3.6V.

What is the speed of the K6X8016T3B-TF70?

The speed of the K6X8016T3B-TF70 is 70ns.

What package type is the K6X8016T3B-TF70 supplied in?

It is supplied in a 44-TSOP2-400F package.

What is the operating temperature range for the K6X8016T3B-TF70?

The operating temperature range is -40°C to 85°C.

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