M29F400FB55N3F2
Alliance
The Alliance Memory M29F400FB55N3F2 is a 4Mb 5V parallel NOR Flash memory device. It operates at 55ns speed and is suitable for automotive applications.
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15,067 pcs
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15067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K6X4016C3F-TF70 from Samsung Electronics is a 256Kx16 bit low power full CMOS static RAM. Fabricated using advanced full CMOS process technology, this memory component supports various operating temperature ranges and offers small package types for design flexibility.
Key electrical specifications include a power supply voltage range of 4.5V to 5.5V, a speed of 55ns, and a low data retention voltage of 2V minimum. It also features three-state outputs and TTL compatibility. The device is available in a 44-TSOP2-400F package, suitable for surface mount applications.
This SRAM is designed for applications requiring reliable memory storage with low power consumption, including battery-backed systems due to its low data retention current. Its organization of 256K words by 16 bits makes it suitable for a wide range of embedded systems.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 4.5V to 5.5V.
The device is available in a 44-pin TSOP2-400F surface mount package.
The memory is organized as 256K words by 16 bits.
The access time is 55ns.
The maximum standby current is 20µA.
The maximum operating current is 30mA.
The minimum data retention voltage is 2V.
