| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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560 pcs
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560 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Write Cycle Time |
The K6X4008C1F-MF55 from Samsung Electronics is a 4Mbit asynchronous SRAM memory integrated circuit. It offers a memory organization of 512K x 8, providing ample storage for various applications.
This memory IC operates with a supply voltage ranging from 4.5V to 5.5V and features a write cycle time of 55ns. The operating temperature range is specified as -40°C to 85°C (TA), making it suitable for a variety of environmental conditions.
The K6X4008C1F-MF55 is packaged in a 32-TSOP REVERSE format and is designed for surface mount applications. Its technology is classified as SRAM - Asynchronous, and it is a volatile memory type.
This part is identified with an ECCN of EAR99. It is supplied in tray packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 4Mbit.
The memory organization is 512K x 8.
The operating temperature range is -40°C to 85°C.
The supply voltage is 4.5V to 5.5V.
The write cycle time is 55ns.
It is a Volatile SRAM - Asynchronous memory type.
The package is a 32-TSOP REVERSE, supplied in a tray.