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943 pcs
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The SAMSUNG K6T4016U3B-TF85 is a high-performance CMOS Static RAM with an organization of 256K words by 16 bits. Fabricated using SAMSUNG's advanced TFT process technology, this memory device is designed for low power consumption and low voltage operation, making it suitable for battery-backed systems.
The device supports a power supply voltage range of 2.7V to 3.6V, depending on the specific family variant. It features a low data retention voltage of 2V (minimum) and low data retention current, further enhancing its suitability for power-sensitive applications. The K6T4016U3B-TF85 offers various speed options, including 70ns, 85ns, and 100ns access times, catering to different system requirements.
Packaged in a 44-TSOP2-400F/R format, this SRAM is designed for flexibility in system design. Its three-state output and TTL compatibility ensure easy integration into existing digital systems. The K6T4016U3B-TF85 is ideal for applications requiring reliable and efficient memory solutions.
The memory organization is 256K words by 16 bits.
The KM68V4000B family operates from 3.0V to 3.6V, and the KM68U4000B family operates from 2.7V to 3.3V.
The minimum data retention voltage is 2V.
It is fabricated using TFT process technology.
It is available in a 44-TSOP2-400F/R package.
Available speed options include 70ns, 85ns, and 100ns.