K6T4016U3B-TF85 The SAMSUNG K6T4016U3B-TF85 is a 256Kx16 bit CMOS Static RAM designed for low power and low voltage applications. It utilizes TFT process technology and comes in a 44-TSOP2 package.
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K6T4016U3B-TF85

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The SAMSUNG K6T4016U3B-TF85 is a 256Kx16 bit CMOS Static RAM designed for low power and low voltage applications. It utilizes TFT process technology and comes in a 44-TSOP2 package.
✓ Total Stock: 943 pcs

K6T4016U3B-TF85 Available from 1 distributor

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K6T4016U3B-TF85 Specifications Quick View

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K6T4016U3B-TF85 Description

Short technical summary and product information.

The SAMSUNG K6T4016U3B-TF85 is a high-performance CMOS Static RAM with an organization of 256K words by 16 bits. Fabricated using SAMSUNG's advanced TFT process technology, this memory device is designed for low power consumption and low voltage operation, making it suitable for battery-backed systems.

 

The device supports a power supply voltage range of 2.7V to 3.6V, depending on the specific family variant. It features a low data retention voltage of 2V (minimum) and low data retention current, further enhancing its suitability for power-sensitive applications. The K6T4016U3B-TF85 offers various speed options, including 70ns, 85ns, and 100ns access times, catering to different system requirements.

 

Packaged in a 44-TSOP2-400F/R format, this SRAM is designed for flexibility in system design. Its three-state output and TTL compatibility ensure easy integration into existing digital systems. The K6T4016U3B-TF85 is ideal for applications requiring reliable and efficient memory solutions.

K6T4016U3B-TF85 Quick Information

Product Type: CMOS SRAM
Series: K6T
Canonical Name: 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Subcategory: Static RAM

K6T4016U3B-TF85 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K6T4016U3B-TF85 Features

  • 256K x 16 bit memory organization.
  • Low power and low voltage operation.
  • Utilizes advanced TFT process technology.
  • Available in 44-TSOP2 package.
  • Supports TTL compatible outputs.

K6T4016U3B-TF85 Applications

  • Suitable for battery-backed systems.
  • Ideal for power-sensitive applications.
  • Designed for flexible system integration.
  • Used in embedded systems.

K6T4016U3B-TF85 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the memory organization of the K6T4016U3B-TF85?

The memory organization is 256K words by 16 bits.

What are the operating voltage ranges for the K6T4016U3B-TF85 family?

The KM68V4000B family operates from 3.0V to 3.6V, and the KM68U4000B family operates from 2.7V to 3.3V.

What is the minimum data retention voltage for this SRAM?

The minimum data retention voltage is 2V.

What process technology is used for the K6T4016U3B-TF85?

It is fabricated using TFT process technology.

What package type is the K6T4016U3B-TF85 available in?

It is available in a 44-TSOP2-400F/R package.

What are the available speed options for this SRAM?

Available speed options include 70ns, 85ns, and 100ns.

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