| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung Electronics K6T4008C1B-VF70 is a 512Kx8 bit Low Power CMOS Static RAM. Fabricated using advanced CMOS process technology, this SRAM offers flexibility for system design with support for various operating temperature ranges and package types.
Key electrical specifications include a 4.5V to 5.5V power supply voltage and a 70ns access time. It operates with a maximum standby current of 100μA and a maximum operating current of 80mA. The device also supports a low data retention voltage of 2V minimum for battery back-up operations.
This SRAM family is available in multiple package types, including 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R, catering to different board space and assembly requirements. Its TTL compatible three-state output ensures easy integration into digital systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
512K x 8 bits (4 megabits total).
4.5V to 5.5V.
70ns.
0°C to 70°C (commercial).
32-TSOP2-400F/R, 32-SOP-525, and 32-DIP-600.
100μA maximum.
80mA maximum.