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K6T4008C1B-VB70 The Samsung Electronics K6T4008C1B-VB70 is a 512Kx8 bit low power CMOS static RAM. It features a 70ns access time and operates from a 4.5V to 5.5V power supply.
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K6T4008C1B-VB70

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K6T4008C1B-VB70 is a 512Kx8 bit low power CMOS static RAM. It features a 70ns access time and operates from a 4.5V to 5.5V power supply.
✓ Total Stock: 499 pcs

K6T4008C1B-VB70 Available from 1 distributor

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499 pcs
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K6T4008C1B-VB70 Specifications Quick View

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K6T4008C1B-VB70 Description

Short technical summary and product information.

The K6T4008C1B-VB70 is a 512Kx8 bit low power CMOS static RAM from Samsung Electronics. Fabricated using advanced CMOS process technology, this memory component is designed for system flexibility with various operating temperature ranges and package types. It supports a power supply voltage range of 4.5V to 5.5V and offers a fast access time of 70ns.

 

Key electrical characteristics include a maximum operating current of 80mA and a standby current of 100μA. The device also supports a low data retention voltage of 2V minimum, making it suitable for battery back-up operations. It features three-state outputs and is TTL compatible.

 

The K6T4008C1B-VB70 is available in a 32-TSOP2-400F/R package. Its organization is 512K words by 8 bits, providing a total of 4 Megabits of storage. This SRAM is designed for applications requiring reliable and efficient data storage.

K6T4008C1B-VB70 Quick Information

Product Type: CMOS SRAM
Series: K6T
Canonical Name: 512Kx8 bit Low Power CMOS Static RAM
Subcategory: Static RAM

K6T4008C1B-VB70 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K6T4008C1B-VB70 Features

  • 512Kx8 bit organization CMOS SRAM.
  • 70ns maximum access time.
  • 4.5V to 5.5V power supply voltage.
  • Low power consumption with 80mA operating current.
  • Available in a 32-TSOP2-400F/R package.

K6T4008C1B-VB70 Applications

  • Suitable for battery backup systems.
  • Ideal for embedded system memory.
  • Used in data logging applications.
  • Designed for general-purpose memory needs.

K6T4008C1B-VB70 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the K6T4008C1B-VB70?

4.5V to 5.5V.

What package is the K6T4008C1B-VB70 available in?

32-TSOP2-400F/R.

What is the access time of the K6T4008C1B-VB70?

70 ns.

What is the memory organization of the K6T4008C1B-VB70?

512K x 8.

What is the standby current of the K6T4008C1B-VB70?

100 μA maximum.

What is the operating current of the K6T4008C1B-VB70?

80 mA maximum.

What output type does the K6T4008C1B-VB70 have?

TTL compatible three-state outputs.

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