| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,178 pcs
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40178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K6T4008C1B-GB70 from Samsung Electronics is a 512Kx8 bit Low Power CMOS Static RAM. Fabricated using advanced CMOS process technology, this memory component supports various operating temperature ranges and package types for system design flexibility. It operates with a power supply voltage ranging from 4.5V to 5.5V and offers a fast access time of 70ns.
Key features include a low data retention voltage of 2V minimum, enabling battery back-up operation with low data retention current. The device also provides three-state outputs and is TTL compatible. It is available in multiple package types, including 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R, catering to different board space and assembly requirements.
This SRAM is suitable for applications requiring reliable data storage and retrieval. Its low power consumption and flexible packaging options make it a versatile choice for embedded systems and other electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It operates from 4.5V to 5.5V.
It is available in 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R packages.
The maximum access time is 70 ns.
The memory is organized as 512K words by 8 bits.
The maximum standby current (ISB1) is 100 μA.
The SRAM uses TFT (Thin Film Transistor) process technology.
The minimum data retention voltage is 2V.