K6T4008C1B-GB70 The Samsung Electronics K6T4008C1B-GB70 is a 512Kx8 bit Low Power CMOS Static RAM. It operates with a 4.5-5.5V power supply and features a 70ns access time.
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K6T4008C1B-GB70

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K6T4008C1B-GB70 is a 512Kx8 bit Low Power CMOS Static RAM. It operates with a 4.5-5.5V power supply and features a 70ns access time.
✓ Total Stock: 40,178 pcs
$ Price Range: $1.28

K6T4008C1B-GB70 Available from 1 distributor

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✓ Non-Authorised
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K6T4008C1B-GB70 Specifications Quick View

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K6T4008C1B-GB70 Description

Short technical summary and product information.

The K6T4008C1B-GB70 from Samsung Electronics is a 512Kx8 bit Low Power CMOS Static RAM. Fabricated using advanced CMOS process technology, this memory component supports various operating temperature ranges and package types for system design flexibility. It operates with a power supply voltage ranging from 4.5V to 5.5V and offers a fast access time of 70ns.

 

Key features include a low data retention voltage of 2V minimum, enabling battery back-up operation with low data retention current. The device also provides three-state outputs and is TTL compatible. It is available in multiple package types, including 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R, catering to different board space and assembly requirements.

 

This SRAM is suitable for applications requiring reliable data storage and retrieval. Its low power consumption and flexible packaging options make it a versatile choice for embedded systems and other electronic designs.

K6T4008C1B-GB70 Quick Information

Product Type: CMOS Static RAM
Canonical Name: 512Kx8 Low Power CMOS Static RAM
Subcategory: Static RAM

K6T4008C1B-GB70 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K6T4008C1B-GB70 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K6T4008C1B-GB70 Features

  • 512Kx8 bit organization
  • 4.5V to 5.5V power supply
  • 70ns maximum access time
  • Low power CMOS technology
  • Available in DIP, SOP, and TSOP

K6T4008C1B-GB70 Applications

  • Suitable for high-speed cache memory.
  • Ideal for telecommunications equipment.
  • Used in industrial control systems.
  • Applications requiring low standby power.

K6T4008C1B-GB70 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the K6T4008C1B-GB70?

It operates from 4.5V to 5.5V.

What package options are available for this SRAM?

It is available in 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R packages.

What is the access time of the K6T4008C1B-GB70?

The maximum access time is 70 ns.

What is the memory organization?

The memory is organized as 512K words by 8 bits.

What is the standby current consumption?

The maximum standby current (ISB1) is 100 μA.

What process technology is used?

The SRAM uses TFT (Thin Film Transistor) process technology.

What is the minimum data retention voltage?

The minimum data retention voltage is 2V.

K6T4008C1B-GB70 Alternate Parts

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The Samsung Electronics KM62256CLP-7 is a 32Kx8 CMOS Static RAM (SRAM) with a 70ns access time. It operates from a single 5V power supply.
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