K6R4016V1D-TI10

The Samsung K6R4016V1D-TI10 is a 4,194,304-bit (4 Mbit) static random-access memory (SRAM) integrated circuit. It features an organization of 256K words by 16 bits and a fast 10-nanosecond access time, operating at a nominal supply voltage of 3.3V.

This SRAM is housed in a TSOP-44 (Thin Small Outline Package, 44-pin) footprint, conforming to JEDEC standard MO-141BA. This packaging allows for direct placement on legacy printed circuit boards designed for parallel-interface SRAMs of similar density and timing characteristics.

The K6R4016V1D-TI10 is commonly found in industrial automation systems, such as PLC backplanes and motion controller buffers, where deterministic latency is critical. It is also utilized in telecom infrastructure for older base station transceivers and protocol analyzers requiring stable memory for real-time packet buffering. Additionally, it appears in vintage computing and test equipment, including logic analyzers and FPGA development boards from the early 2000s.

Its value proposition lies in its specific part number compatibility, making it a component-level building block for systems that require strict timing and voltage alignment. Sourcing reliability is a key consideration due to its end-of-life status.