| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,089 pcs
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20089 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K6R4008C1D-TC10 from Samsung Electronics is a memory integrated circuit designed for specialized applications. It offers a substantial 4Mb capacity, enabling storage of significant data.
Key performance specifications include a rapid 10ns access time, ensuring quick data retrieval and processing. The component operates with a 5V power supply, making it compatible with a range of electronic systems. Its advanced CMOS technology contributes to low power consumption and high reliability.
This memory IC is housed in a standard IC package with industry-compatible dimensions. It is shipped in anti-static packaging to ensure protection during handling and transit. The product is manufactured under stringent quality control in certified facilities, aiming for high MTBF (Mean Time Between Failures).
Optimized for high-speed operations, the K6R4008C1D-TC10 minimizes the risk of data corruption. Its design makes it uniquely suited for applications requiring high memory density and fast access times, such as telecommunications equipment, embedded systems, and high-performance computing.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K6R4008C1D-TC10 has a memory capacity of 4Mb.
The access time for the K6R4008C1D-TC10 is 10ns.
The K6R4008C1D-TC10 operates at a 5V power supply.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.