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K6R1008V1D-TI10

The Samsung Electronics K6R1008V1D-TI10 is a standard SRAM memory IC. It features a 10ns access time and operates at a nominal voltage of 3.3V.

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K6R1008V1D-TI10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Samsung Electronics
Access Time	10 ns
Memory Type	STANDARD SRAM
Mounting Type	Surface Mount
Package / Case	PDSO32
Supply Current	0.075 A

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K6R1008V1D-TI10 Description

Short technical summary and product information.

The Samsung Electronics K6R1008V1D-TI10 is a high-performance standard SRAM memory integrated circuit. It offers a fast access time of 10ns, making it suitable for applications requiring quick data retrieval.

This memory IC operates with a supply voltage range of 3V to 3.6V, with a nominal voltage of 3.3V. It has a memory size of 131072 words and a data width of 8 bits, providing a total capacity of 128K x 8. The device consumes a maximum supply current of 0.075A and a standby current of 0.005A.

Packaged in a 32-pin PDSO (Plastic Small Outline) package with a JEDEC code of R-PDSO-G32, this component is designed for surface mounting. The package dimensions are 10.16mm in width and 20.95mm in length. It operates within an industrial temperature range of -40°C to 85°C.

The K6R1008V1D-TI10 supports parallel interface and is classified under ECCN 3A991.B.2.B and HTS Code 8542.32.00.41.

K6R1008V1D-TI10 Quick Information

Product Type: Standard SRAM

Series: K6R1008V1D

Canonical Name: Samsung Electronics K6R1008V1D-TI10 Standard SRAM

Subcategory: Standard SRAM

K6R1008V1D-TI10 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

K6R1008V1D-TI10 Features

Standard SRAM memory IC.
Fast 10ns maximum access time.
Wide operating voltage range.
Industrial temperature operation.
32-pin PDSO surface mount package.

K6R1008V1D-TI10 Applications

Ideal for embedded system memory expansion.
Used in industrial control panel interfaces.
Suitable for automotive telematics modules.
Supports consumer electronics data buffering.
Enables high speed cache memory implementations.

K6R1008V1D-TI10 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the operating voltage range for this SRAM?

The device operates between 3.0 volts minimum and 3.6 volts maximum, with a nominal supply voltage of 3.3 volts.

What package type does the K6R1008V1D-TI10 use?

It utilizes a 32-pin PDSO32 surface mount package with a JEDEC code of R-PDSO-G32.

What is the specified operating temperature range?

The component functions reliably from a minimum of -40 degrees Celsius to a maximum of 85 degrees Celsius.

What is the memory organization and capacity?

The IC provides 131,072 words of storage with an 8-bit data width per word.

What is the maximum active supply current?

The maximum supply current draw during operation is 75 milliamperes.

What is the maximum standby current limit?

The device consumes a maximum of 5 milliamperes when placed in standby mode.