K524G2GACJ-B050

The Samsung K524G2GACJ-B050 is a Multi Chip Package Memory that integrates 4Gb NAND Flash Memory with 2Gb DDR synchronous high data rate Dynamic RAM. This device is designed for cost-effective solid-state applications, offering a program operation in typical 250µs and an erase operation in typical 2ms. Data can be read out at a cycle time of 42ns per Word.

Key features include a wide operating temperature range of -25°C to 85°C and a voltage supply range of 1.7V to 1.95V. The memory organization consists of 4Gb NAND Flash and 2Gb DDR RAM. It supports various operational parameters such as CAS Latency 3, Burst Lengths of 2, 4, 8, or 16, and programmable burst types. The device also features a double-data-rate architecture and bidirectional data strobe (DQS).

Packaged in a 137-ball FBGA with dimensions of 10.5 x 13 x 1.2mm and a 0.8mm pitch, this component is suitable for applications requiring non-volatile storage. The on-chip write controller automates program and erase functions, including verification and margining. With an endurance of 100K Program/Erase cycles supported by ECC, it is reliable for write-intensive systems. The device is an optimum solution for solid-state file storage and other portable applications demanding non-volatility.