K4T51163QI-HCE7 The K4T51163QI-HCE7 is a 512Mbit DDR2 SDRAM memory module from SAMSUNG. It operates at 1.8V with a speed of 800MBPS and comes in a FBGA-84 package.
Mfr Part #:

K4T51163QI-HCE7

Available from 1 distributors
Mfr Name: Samwha
Samwha
The K4T51163QI-HCE7 is a 512Mbit DDR2 SDRAM memory module from SAMSUNG. It operates at 1.8V with a speed of 800MBPS and comes in a FBGA-84 package.
✓ Total Stock: 313 pcs

K4T51163QI-HCE7 Available from 1 distributor

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✓ Non-Authorised
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313 pcs
313 pcs On Request 1 On Request On Request N/A On Request On Request

K4T51163QI-HCE7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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K4T51163QI-HCE7 Description

Short technical summary and product information.

The SAMSUNG K4T51163QI-HCE7 is a high-performance DDR2 SDRAM memory module with a density of 512Mbit and an organization of x16. It operates at a speed of 800MBPS and requires an operating voltage of 1.8V.

 

This memory module features 4 internal banks and belongs to the 10th generation of memory technology. It is housed in a FBGA-84 package, suitable for various electronic applications requiring reliable memory solutions.

 

The operating temperature range for the K4T51163QI-HCE7 is from 0°C to +85°C, ensuring stable performance under typical environmental conditions. Its RoHS3 compliant status indicates adherence to environmental regulations.

K4T51163QI-HCE7 Quick Information

Product Type: DDR2 SDRAM
Canonical Name: K4T51163QI-HCE7 DDR2 SDRAM Memory Module
Subcategory: DDR2 SDRAM

K4T51163QI-HCE7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K4T51163QI-HCE7 Features

  • 512Mbit DDR2 SDRAM memory module
  • 800MBPS speed for fast data transfer
  • 1.8V operating voltage for power efficiency
  • FBGA-84 package for compact integration
  • RoHS3 compliant for environmental standards

K4T51163QI-HCE7 Applications

  • Ideal for embedded systems
  • Suitable for consumer electronics
  • Used in networking equipment
  • Applicable in industrial controls

K4T51163QI-HCE7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory type of the K4T51163QI-HCE7?

The K4T51163QI-HCE7 is a DDR2 SDRAM memory module.

What is the density of the K4T51163QI-HCE7?

The density of the K4T51163QI-HCE7 is 512Mbit.

What is the organization of the K4T51163QI-HCE7 memory?

The organization of the K4T51163QI-HCE7 is x16.

How many internal banks does the K4T51163QI-HCE7 have?

The K4T51163QI-HCE7 has 4 internal banks.

What is the speed of the K4T51163QI-HCE7?

The speed of the K4T51163QI-HCE7 is 800MBPS.

What is the operating voltage for the K4T51163QI-HCE7?

The operating voltage for the K4T51163QI-HCE7 is 1.8V.

What is the operating temperature range of the K4T51163QI-HCE7?

The operating temperature range of the K4T51163QI-HCE7 is 0°C to +85°C.

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