| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
313 pcs
|
313 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The SAMSUNG K4T51163QI-HCE7 is a high-performance DDR2 SDRAM memory module with a density of 512Mbit and an organization of x16. It operates at a speed of 800MBPS and requires an operating voltage of 1.8V.
This memory module features 4 internal banks and belongs to the 10th generation of memory technology. It is housed in a FBGA-84 package, suitable for various electronic applications requiring reliable memory solutions.
The operating temperature range for the K4T51163QI-HCE7 is from 0°C to +85°C, ensuring stable performance under typical environmental conditions. Its RoHS3 compliant status indicates adherence to environmental regulations.
The K4T51163QI-HCE7 is a DDR2 SDRAM memory module.
The density of the K4T51163QI-HCE7 is 512Mbit.
The organization of the K4T51163QI-HCE7 is x16.
The K4T51163QI-HCE7 has 4 internal banks.
The speed of the K4T51163QI-HCE7 is 800MBPS.
The operating voltage for the K4T51163QI-HCE7 is 1.8V.
The operating temperature range of the K4T51163QI-HCE7 is 0°C to +85°C.