| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Size | |
| Operating Voltage | |
| SVHC Present |
The Samsung Electronics K4T51163QI-HCE6 is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) chip. It offers a memory capacity of 512 Megabits, organized as 32M words by 16 bits.
This component operates at a voltage of 1.8V, making it suitable for various electronic applications. The chip is housed in an 84-pin Fine-Pitch Ball Grid Array (FBGA) package, designed for surface mounting.
Key specifications include its DDR2 SDRAM type, 512M-Bit density, 32Mx16 organization, and 1.8V supply voltage. The FBGA package facilitates compact board designs.
The K4T51163QI-HCE6 is a DDR2 SDRAM chip.
The memory size is 512M-Bit.
The operating voltage is 1.8V.
It uses an 84-pin FBGA package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.