| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,829 pcs
|
25829 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Memory Type | |
| SVHC Present |
The K4T51163QG-HCE6000 from Samsung Electronics is a DRAM (Dynamic Random-Access Memory) integrated circuit designed for memory applications. It features a 32Mx16 organization, providing a substantial memory capacity for various electronic systems. This component operates with a supply voltage of 1.8V and offers a fast access time of 0.45ns, making it suitable for high-speed data processing.
The DRAM IC is supplied in an FBGA (Fine-pitch Ball Grid Array) package, which is a surface-mount type known for its compact size and good electrical performance. This packaging is often chosen for applications where space is a constraint and high pin density is required.
This memory IC is part of Samsung Electronics' extensive line of memory solutions. It is designed to meet the demands of modern electronic devices that require efficient and reliable data storage. The component's specifications suggest its use in systems requiring fast read and write operations for temporary data storage, such as in computing, mobile devices, and embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4T51163QG-HCE6000 is a DRAM memory IC.
The memory organization is 32Mx16.
The access time is 0.45ns.
The operating voltage is 1.8V.
The component is packaged in FBGA.