| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| Memory Organization | |
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| Operating Voltage |
This Samsung K4T1G164QQ-HCE6 is a DRAM memory integrated circuit with a capacity of 1Gb. It features a memory organization of 64Mx16bit and operates at a voltage of 1.8V. The clock frequency for this component is 333MHz, and it utilizes a parallel interface.
The component is housed in an FBGA84 package and is designed for surface mounting (SMD). Its specifications make it suitable for various memory applications requiring reliable and efficient data storage.
Key electrical characteristics include its SDRAM type, 1Gb density, and 333MHz speed. The 1.8V operating voltage is a standard for many modern electronic systems. The FBGA84 package is a compact form factor for high-density applications.
The operating voltage is 1.8V.
The package is FBGA84.
The memory type is SDRAM.
The memory size is 1Gb.
The clock frequency is 333MHz.
The memory organization is 64Mx16bit.
The interface type is parallel.