ESDA14V2-2BF3
ST
The ST ESDA14V2-2BF3 is a TVS Diode designed for transient voltage suppression. It features RoHS3 compliance and MSL 1 rating.
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36,160 pcs
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36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung Electronics K4T1G164QE-HIE6 is a DRAM (Dynamic Random-Access Memory) integrated circuit. This component is designed for memory applications requiring reliable data storage and retrieval.
Key specifications include RoHS3 compliance, indicating adherence to European Union directives on hazardous substances. It also features a Moisture Sensitivity Level (MSL) of 1 Unlimited, meaning it is not sensitive to ambient moisture and does not require special handling during assembly. The REACH status is noted as Unaffected, suggesting compliance with European regulations on chemical registration, evaluation, authorization, and restriction.
This DRAM is suitable for various electronic systems where efficient memory is crucial. Its specifications suggest it is designed for standard operating conditions, though specific electrical characteristics like voltage and clock speed would need to be confirmed from detailed documentation.
Further details regarding package type, operating temperature, and specific performance metrics are not provided in the available data and would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
