Mfr Part #:

K4T1G164QE-HCF7

The Samsung Electronics K4T1G164QE-HCF7 is a 1Gb DDR2 SDRAM with a 1.8V supply voltage and a data rate up to 800Mb/sec/pin. It comes in a BGA package.

✓ Total Stock: 37,775 pcs

$ Price Range: $1.28

K4T1G164QE-HCF7 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	20,000 pcs On Request	20000 pcs	On Request	1	On Request	On Request	1110+	On Request	On Request
Romaks Technologies ✓ Non-Authorised Inventory information	16,436 pcs On Request	16436 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,339 pcs On Request	1339 pcs	On Request	1	On Request	On Request	1110+	On Request	On Request

K4T1G164QE-HCF7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Samsung Electronics
Capacity	1Gb
Halogen Free	Halogen-Free
Mounting Type	Surface Mount

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K4T1G164QE-HCF7 Description

Short technical summary and product information.

The Samsung Electronics K4T1G164QE-HCF7 is a 1Gb DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) device designed for high-speed applications. It operates with a standard supply voltage of 1.8V ± 0.1V and achieves data transfer rates of up to 800Mb/sec/pin (DDR2-800).

This memory component is organized as 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks, or 8Mbit x 16 I/Os x 8 banks. Key features include programmable CAS Latency (3, 4, 5, 6), programmable Additive Latency (0-5), and a Write Latency (WL) that is one less than the Read Latency (RL). It supports burst lengths of 4 and 8.

The K4T1G164QE-HCF7 is housed in a Ball Grid Array (BGA) package, suitable for surface mount applications. It also features On-Die Termination (ODT) and Off-Chip Driver (OCD) impedance adjustment for signal integrity. The device is RoHS, Lead-Free, and Halogen-Free compliant.

K4T1G164QE-HCF7 Quick Information

Product Type: DDR2 SDRAM

Series: K4T1G164QE

Canonical Name: Samsung Electronics K4T1G164QE-HCF7 1Gb DDR2 SDRAM

Subcategory: SDRAM

K4T1G164QE-HCF7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

K4T1G164QE-HCF7 Estimated Pricing

Qty	Low	High
1+	$1.28	$1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K4T1G164QE-HCF7 Features

1Gb DDR2 SDRAM device.
Operates at 1.8V supply voltage.
Achieves up to 800Mb/sec/pin data rate.
Features programmable CAS and Additive Latency.
Packaged in BGA for surface mounting.

K4T1G164QE-HCF7 Applications

Used in high-speed memory modules.
Suitable for embedded computing systems.
Ideal for networking and telecommunications equipment.
Applied in industrial control systems.
Designed for consumer electronics memory.

K4T1G164QE-HCF7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage of the K4T1G164QE-HCF7?

The supply voltage range is 1.7V to 1.9V for VDD, VDDL, and VDDQ, with a nominal 1.8V.

What package type is the K4T1G164QE-HCF7 available in?

The K4T1G164QE-HCF7 is offered in a BGA package for surface-mount assembly.

What data rates does the K4T1G164QE-HCF7 support?

It supports DDR2-667 and DDR2-800 operation with 667 and 800 Mb/sec/pin data rates.

What is the memory capacity and organization of the K4T1G164QE-HCF7?

It is a 1Gb DDR2 SDRAM organized as 32Mbit x 4, 16Mbit x 8, or 8Mbit x 16 with 8 banks.

What CAS latency options are programmable?

The programmable CAS latency values are 3, 4, 5, and 6.

What are the refresh period requirements?

The average refresh period is 7.8us at case temperatures below 85°C and 3.9us between 85°C and 95°C.

What burst lengths are supported?

Burst lengths of 4 and 8 are supported.