| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Clock Frequency | |
| Density | |
| Memory Type | |
| SVHC Present |
The K4T1G164QE-HCE6 from Samsung Electronics is a 1Gbit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) integrated circuit. This component operates at a clock frequency of 667MHz, making it suitable for various memory applications requiring high-speed data access.
The memory module is housed in a BGA-84 (Ball Grid Array) package, which is commonly used for surface-mount devices requiring a high density of connections. The packaging options include Tape & Reel, Cut Tape, Tray, and Tube, catering to different manufacturing and assembly processes.
Compliance information indicates RoHS status as Lead-free and RoHS Compliant, with a Moisture Sensitivity Level (MSL) of 1 (Unlimited) and REACH status as Unaffected. These specifications are important for handling, storage, and integration into electronic designs, particularly in environments with strict regulatory requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4T1G164QE-HCE6 is a DDR2 SDRAM memory.
The density of the K4T1G164QE-HCE6 is 1 Gbit.
The K4T1G164QE-HCE6 operates at a clock frequency of 667 MHz.
The K4T1G164QE-HCE6 is supplied in a BGA-84 package.
The RoHS status is Lead free / RoHS Compliant, and the REACH status is REACH Unaffected.