| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
640 pcs
|
640 pcs | On Request | 1 | On Request | On Request | 04+16 | On Request | On Request |
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The Samsung K4S641633H-RN75 is a 64Mb SDRAM memory integrated circuit. It is organized as 16M x 16 bits and belongs to Samsung's 9th generation of memory technology, offering low power consumption with i-TCSR.
This component operates with a supply voltage range of 3.0V to 3.3V and supports a speed of 133MHz. The operating temperature range is specified from -25°C to +85°C, making it suitable for a variety of environmental conditions.
The K4S641633H-RN75 comes in a FBGA-54 package, designed for surface mounting. It is compliant with RoHS3 standards and is considered lead-free.
This memory component is ideal for applications requiring reliable and efficient data storage. Its specifications make it a versatile choice for embedded systems and other electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 64Mb.
The operating voltage is 3.0V/3.3V.
The speed is 133 MHz.
The operating temperature range is -25 C to +85 C.
It uses the FBGA-54 package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.