| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,232 pcs
|
7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Memory Organization | |
| Mounting Type | |
| Number of Bits | |
| Output Current |
The Samsung K4S561632JUC75 is a high-performance synchronous Dynamic RAM (SDRAM) with a total capacity of 268,435,456 bits. It is fabricated using Samsung's advanced CMOS technology.
This memory chip is organized as 4 banks, each containing 16,777,216 words by 4 bits (or alternative configurations of 8 bits or 16 bits). It supports JEDEC standard 3.3V power supply and LVTTL compatible inputs. Key features include programmable CAS latency (2 & 3), programmable burst length (1, 2, 4, 8 & Full page), and programmable burst type (Sequential & Interleave).
The K4S561632JUC75 is designed for high bandwidth, high performance memory system applications. It operates with I/O transactions possible on every clock cycle, allowing for precise cycle control. The device supports auto and self-refresh with a 64ms refresh period (8K Cycle).
Packaged in a TSOP-54 surface mount configuration, this memory chip is suitable for various electronic applications. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.00V to 5.50V.
The memory capacity is 268,435,456 bits (256Mb).
The K4S561632JUC75 is available in a TSOP-54 package.
The maximum propagation delay is 250ps.
The output current is 64mA.