| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 04/05+ | On Request | On Request |
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The Samsung Semiconductor K4S561632E-TC75 is a high-performance CMOS Synchronous Dynamic RAM (SDRAM) with a capacity of 256Mb. It is organized as 4 x 16,785,216 words by 4 bits, offering a data rate specified at 5.4ns. This component operates within a voltage range of 3V to 3.6V and can function in temperatures from 0°C to 70°C. The maximum supply current is 180mA.
Packaged in a PDSO54, this SDRAM is suitable for various memory applications requiring reliable and efficient data storage. Its synchronous nature allows for high-speed data transfer, making it a component for systems needing fast memory access. The fabrication uses Samsung's high-performance CMOS technology, ensuring quality and performance.
This part is identified as E-die SDRAM. Its specifications make it a candidate for embedded systems, consumer electronics, and other applications where memory density and speed are critical. The PDSO54 package is a standard surface-mount form factor.
3V to 3.6V
0°C to 70°C
256Mb
PDSO54
16Mx16
5.4ns
180mA