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K4S561632E-TC75 The Samsung Electronics K4S561632E-TC75 is a 268,435,456 bit synchronous high data rate Dynamic RAM. It operates within a voltage range of 3V to 3.6V.
Mfr Part #:

K4S561632E-TC75

Available from 2 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung Electronics K4S561632E-TC75 is a 268,435,456 bit synchronous high data rate Dynamic RAM. It operates within a voltage range of 3V to 3.6V.
✓ Total Stock: 1,206 pcs
$ Price Range: $2.23

K4S561632E-TC75 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
1,200 pcs
On Request
1200 pcs On Request 1 On Request On Request 04/05+ On Request On Request
Partservice ✓
Non-Authorised Inventory information
6 pcs
On Request
6 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

K4S561632E-TC75 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Data Rate
Memory Size
Operating Temperature
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K4S561632E-TC75 Description

Short technical summary and product information.

The Samsung Electronics K4S561632E-TC75 is a 268,435,456 bit synchronous high data rate Dynamic RAM. It is fabricated using Samsung's high-performance CMOS technology.

 

This DRAM is organized as 4 x 16,785,216 words by 4 bits. It features a minimum operating voltage of 3V and a maximum operating voltage of 3.6V. The maximum supply current is 180mA.

 

Operating temperature ranges from 0°C to 70°C. The component is housed in a PDSO54 package and has 54 terminals. The data rate is specified at 5.4ns, indicating its high-speed capability.

 

This component is suitable for applications requiring high-density memory with reliable performance within the specified electrical and thermal conditions.

K4S561632E-TC75 Quick Information

Product Type: Synchronous DRAM
Canonical Name: Samsung Electronics K4S561632E-TC75 Synchronous DRAM
Subcategory: Synchronous DRAM

K4S561632E-TC75 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K4S561632E-TC75 Estimated Pricing

Qty Low High
1+ $2.23 $2.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

K4S561632E-TC75 Features

  • 268,435,456 bits synchronous DRAM.
  • Operates from 3V to 3.6V supply voltage.
  • Wide operating temperature range of 0°C to 70°C.
  • High performance CMOS technology fabrication.
  • Packaged in PDSO54 with 54 terminals.

K4S561632E-TC75 Applications

  • Suitable for high-speed data storage.
  • Ideal for embedded systems.
  • Used in memory expansion modules.
  • Applications requiring dense memory.

K4S561632E-TC75 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the voltage rating for the K4S561632E-TC75?

The voltage rating for the K4S561632E-TC75 is between 3V and 3.6V.

What is the operating temperature range for this DRAM?

The operating temperature range for the K4S561632E-TC75 is from 0°C to 70°C.

What is the memory size of the K4S561632E-TC75?

The K4S561632E-TC75 has a memory size of 268,435,456 bits.

What is the package type for the K4S561632E-TC75?

The K4S561632E-TC75 is supplied in a PDSO54 package.

What is the maximum supply current for the K4S561632E-TC75?

The maximum supply current for the K4S561632E-TC75 is 180mA.

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