| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 0613TP/ | On Request | On Request |
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The K4S281632I-UC60 from Samsung Electronics is a 134,217,728-bit synchronous high data rate Dynamic RAM. It is fabricated using high-performance CMOS technology and operates with a JEDEC standard 3.3V power supply. The memory is organized in various configurations, including 4 x 8,388,608 words by 4 bits, 4 x 4,194,304 words by 8 bits, and 4 x 2,097,152 words by 16 bits.
This DRAM features LVTTL compatibility and supports programmable burst lengths and latencies, making it suitable for high bandwidth memory system applications. Key features include four-bank operation, auto and self-refresh capabilities, and a 64ms refresh period. The component is supplied in a TSOP package.
Synchronous design allows for precise cycle control with the system clock, enabling I/O transactions on every clock cycle. The K4S281632I-UC60 is designed for a range of operating frequencies and offers burst read and single-bit write operations. It also includes DQM masking for data integrity.
It requires a 3.3V power supply.
It is available in a TSOP package.
The storage temperature range spans from -55°C to +150°C.
The device requires a 64ms refresh period using a 4K cycle.
Yes, it supports both auto and self-refresh modes.
The absolute maximum power dissipation is rated at 1W.