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K4S281632F-TC60 The K4S281632F-TC60 is a 134,217,728 bit synchronous high data rate Dynamic RAM (SDRAM) from Samsung Semiconductor. It is fabricated using high-performance CMOS technology.
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K4S281632F-TC60

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The K4S281632F-TC60 is a 134,217,728 bit synchronous high data rate Dynamic RAM (SDRAM) from Samsung Semiconductor. It is fabricated using high-performance CMOS technology.
✓ Total Stock: 53 pcs

K4S281632F-TC60 Available from 1 distributor

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53 pcs
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K4S281632F-TC60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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K4S281632F-TC60 Description

Short technical summary and product information.

The K4S281632F-TC60 is a synchronous high data rate Dynamic RAM (SDRAM) manufactured by Samsung Semiconductor. This component offers a total capacity of 134,217,728 bits.

 

It is organized into multiple configurations: 4 x 8,388,608 words by 4 bits, 4 x 4,194,304 words by 8 bits, or 4 x 2,097,152 words by 16 bits. The device is fabricated using Samsung's high-performance CMOS technology, ensuring efficient operation.

 

This SDRAM is suitable for various memory applications requiring high-speed data transfer. Its design focuses on performance and reliability, making it a component for systems needing substantial memory capacity and fast access times.

K4S281632F-TC60 Quick Information

Product Type: SDRAM
Series: K4S
Canonical Name: K4S281632F-TC60 SDRAM
Subcategory: Memory

K4S281632F-TC60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K4S281632F-TC60 Features

  • Synchronous high data rate 128Mb SDRAM.
  • Configurable x4, x8, x16 output widths.
  • High performance CMOS fabrication technology.
  • 4-bank organization for flexible width.
  • F-die based SDRAM memory design.

K4S281632F-TC60 Applications

  • Used in networking equipment memory buffers.
  • Ideal for embedded system main memory.
  • Suitable for consumer electronics applications.
  • Used in telecommunications infrastructure.
  • Common in computer peripheral memory.

K4S281632F-TC60 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the description of the K4S281632F-TC60?

The K4S281632F-TC60 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

What technology is used in the K4S281632F-TC60?

The K4S281632F-TC60 is fabricated with high-performance CMOS technology.

What is the RoHS status for K4S281632F-TC60?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for K4S281632F-TC60?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for K4S281632F-TC60?

The REACH status is REACH Unaffected.

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