| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,053 pcs
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12053 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K4M563233G-HN75 from Samsung Electronics is a high-performance synchronous Dynamic RAM with a capacity of 268,435,456 bits. It is fabricated using high-performance CMOS technology and organized as 4 x 2,097,152 words by 32 bits.
This DRAM features a synchronous design, allowing precise cycle control with the system clock. I/O transactions can occur on every clock cycle. It supports programmable burst lengths and latencies, making it suitable for high bandwidth memory system applications. The device operates with 3.0V and 3.3V power supplies and is LVCMOS compatible.
Key features include four banks of operation, programmable CAS latency (1, 2, & 3), and burst types (Sequential & Interleave). Special functions like Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR) are supported, along with DQM for masking and auto refresh capabilities. The refresh period is 64ms for 4K cycles.
The K4M563233G-HN75 is available in a 90-Balls FBGA package, suitable for surface mount applications. It offers both commercial temperature operation (-25°C to 70°C) and extended temperature operation (-25°C to 85°C).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.0V and 3.3V.
It is available in a 90-ball FBGA (BGA) package.
Commercial: -25°C to 70°C; Extended: -25°C to 85°C.
It is organized as 4 banks of 2,097,152 words by 32 bits.
CAS latencies of 1, 2, and 3 are supported.
Burst lengths of 1, 2, 4, 8, and full page are available.
The refresh period is 64ms with 4K cycles.