| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,829 pcs
|
25829 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Samsung Electronics K4M563233G-FN75 is a Synchronous DRAM (Dynamic Random Access Memory) component. It features a maximum clock frequency of 133 MHz and a maximum access time of 5.4 ns, making it suitable for various memory applications.
This DRAM has a memory density of 268435456 bits and an organization of 8mx32. It operates within a temperature range of -25°C to 85°C and requires a supply current of up to 0.16 mA. The component is manufactured using CMOS technology.
The K4M563233G-FN75 is provided in an FBGA (Fine-Pitch Ball Grid Array) package, designed for surface mounting. It has 90 terminals with a pitch of 0.8 mm and a rectangular shape. The package body material is plastic/epoxy with a matte tin terminal finish.
Environmental compliance includes RoHS3 compliance and an MSL of 1. The part is also listed as Lead Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum clock frequency for the K4M563233G-FN75 is 133 MHz.
The maximum access time for the K4M563233G-FN75 is 5.4 ns.
The memory density of the K4M563233G-FN75 is 268435456 Bit.
The operating temperature range for the K4M563233G-FN75 is -25°C to 85°C.
The K4M563233G-FN75 is supplied in an FBGA package.
The K4M563233G-FN75 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the K4M563233G-FN75 is 1 Unlimited.