AS4C64M16D3W-12BCN
Alliance
The Alliance AS4C64M16D3W-12BCN is a 1Gb DDR3 DRAM with a 64M x 16 organization. It operates at 1.5V and features an 800MHz clock speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,067 pcs
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15067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present |
The Samsung Electronics K4M56163LG-BN7500 is a memory integrated circuit designed for various electronic applications. This component comes in a BGA811 package, suitable for surface-mount designs.
Key specifications include RoHS3 compliance, indicating adherence to environmental standards for hazardous substances. It also has a Moisture Sensitivity Level (MSL) of 1, meaning it has unlimited shelf life under dry conditions. The REACH status is unaffected, suggesting compliance with regulations concerning chemical substances.
This memory IC is manufactured by Samsung Electronics, a recognized leader in semiconductor technology. Its specific electrical characteristics and performance metrics would be detailed in its technical documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4M56163LG-BN7500 is supplied in a BGA811 package.
The K4M56163LG-BN7500 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the K4M56163LG-BN7500 is 1 Unlimited.
The K4M56163LG-BN7500 is REACH Unaffected.