| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
303 pcs
|
303 pcs | On Request | 1 | On Request | On Request | 640 | On Request | On Request |
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The Samsung Electronics K4M28323PH-HG750 is a Synchronous DRAM component designed for various electronic applications. It features a memory density of 134217728 bits and a memory width of 32 bits, organized as 4Mx32.
Key electrical specifications include a maximum clock frequency of 133 MHz and a maximum access time of 6 ns. The device operates with a nominal supply voltage of 1.8V, with a minimum of 1.7V and a maximum of 1.95V. It supports synchronous operation with auto/self refresh capabilities and a burst length of 1,2,4,8.
Packaged in an FBGA-90, surface-mount configuration, this component has 90 pins with a terminal pitch of 0.8 mm. The package shape is rectangular with a very thin profile and fine pitch. The operating temperature range is from -25 °C to 85 °C, with a peak reflow temperature of 260 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.20 | $10.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4M28323PH-HG750 operates with a nominal supply voltage of 1.8V, a minimum of 1.7V, and a maximum of 1.95V.
The K4M28323PH-HG750 is supplied in an FBGA-90 package.
The operating temperature range for the K4M28323PH-HG750 is -25 °C to 85 °C.
The K4M28323PH-HG750 is listed as RoHS3 Compliant.