| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The Samsung K4H511638B-TCB3 is a high-performance double data rate synchronous DRAM, fabricated with advanced CMOS technology. It offers a data rate of up to 333Mb/s per pin, enabling efficient data transfer through its double-data-rate architecture.
This DRAM is organized as 4×8,388,608 words by 16 bits and supports four banks of operation. It features bidirectional data strobes and allows I/O transactions on both edges of the data strobe. The device operates within a voltage range of -0.5V to 3.6V and has a power dissipation of 1.5W.
Designed for various high-performance memory system applications, the K4H511638B-TCB3 includes features like auto and self-refresh capabilities. It is supplied in a 66-pin TSOP II package, suitable for surface mount applications.
Key electrical characteristics include a short circuit current of 50mA and a refresh interval of 7.8µs. The storage temperature ranges from -55°C to 150°C.
The voltage on any pin relative to VSS is -0.5V to 3.6V, and the voltage on VDD & VDDQ supply relative to VSS is -1.0V to 3.6V.
The device is offered in a 66-pin TSOP II package.
The maximum data rate is 333 Mb/s per pin.
The power dissipation is 1.5W.
The refresh interval is 7.8 µs with an 8K/64ms refresh scheme.
The storage temperature range is -55°C to 150°C.
The device is designed for surface mount assembly.