| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | 0304+ | On Request | On Request |
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The Samsung K4H280838E-TCB3 is a high-performance DDR1 Synchronous Dynamic Random-Access Memory (SDRAM) module with a density of 128Mbit. It features an organization of 16M words by 8 bits, providing a total of 16M bits of data storage per word.
This component operates at a speed of 166 MHz and requires a nominal voltage of 2.5V. The operating temperature range for the K4H280838E-TCB3 is from 0°C to +85°C, making it suitable for a variety of applications.
Packaged in a TSOP2 (Thin Small Outline Package) type, this memory module is designed for surface mount applications. It is part of Samsung's 6th Generation memory technology, offering reliable performance for embedded systems and other computing needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.20 | $10.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4H280838E-TCB3 is a DDR1 SDRAM with a density of 128Mbit.
This module operates at a voltage of 2.5V and a speed of 166 MHz.
The operating temperature range is 0°C to +85°C.
The K4H280838E-TCB3 is supplied in a TSOP2 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.