| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung K4F6E3S4HM-THCL is a high-performance LPDDR4 SDRAM component with a density of 16Gb and a data rate of 4266Mbps. This synchronous memory utilizes a dual-rail power supply, with a core/IO rail operating between 1.06V and 1.17V, and a second rail ranging from 1.7V to 1.95V. Its x32 data bus width allows for efficient integration into embedded systems.
Designed for low-power applications, the LPDDR4 architecture is suitable for battery-powered and thermally constrained devices. The component is supplied in a compact 200-ball FBGA surface-mount package, ideal for direct board or package-on-package attachment. This makes it well-suited for applications such as smartphones, tablets, automotive infotainment systems, industrial handhelds, and networking modules where space and power efficiency are critical.
Samsung supplies this discrete LPDDR4 component for applications requiring soldered-down memory solutions. Its organization and specifications are tailored for embedded SoC memory interfaces, reducing routing complexity compared to multiple narrow devices. Buyers typically include handset and automotive tier-one suppliers, embedded module manufacturers, and ODM teams.
The K4F6E3S4HM-THCL has a density of 16Gb.
The data rate is 4266Mbps.
The data bus width is 32 bits (x32).
The core/IO voltage range is 1.06V to 1.17V.
It is available in a 200-Ball FBGA package.
Yes, it is a synchronous memory device.