| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,260 pcs
|
2260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Density | |
| Lead Style | |
| Memory Type | |
| Operating Voltage |
This LPDDR4 memory module from Samsung Electronics, part number K4F6E3S4HM-MGCJ, provides a high-performance solution for various electronic applications. It features a substantial 16Gb density, enabling large data storage capabilities.
The component is designed with a 32-bit data bus width, facilitating efficient data transfer. It operates at a high clock speed of 3733 MHz, ensuring rapid processing. The module requires an operating voltage of 1.1V, making it suitable for power-sensitive designs.
This memory is categorized under DRAM, specifically LPDDR4, indicating its suitability for mobile and embedded systems requiring low power consumption and high bandwidth. Its specifications make it a robust choice for applications demanding fast and reliable memory access.
| Qty | Low | High |
|---|---|---|
| 1+ | $105.57 | $105.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4F6E3S4HM-MGCJ is an LPDDR4 memory.
The density of the K4F6E3S4HM-MGCJ is 16Gb.
The data bus width is 32 bits.
The operating voltage is 1.1V.
The clock speed is 3733 MHz.